Electronic Properties of Semiconductor Interfaces (Springer Series in Surface Sciences)
Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-functiontails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ioniccharacter of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling?s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitativelyexplain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.
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